JPH0547982B2 - - Google Patents

Info

Publication number
JPH0547982B2
JPH0547982B2 JP57123895A JP12389582A JPH0547982B2 JP H0547982 B2 JPH0547982 B2 JP H0547982B2 JP 57123895 A JP57123895 A JP 57123895A JP 12389582 A JP12389582 A JP 12389582A JP H0547982 B2 JPH0547982 B2 JP H0547982B2
Authority
JP
Japan
Prior art keywords
conductivity type
polysilicon
semiconductor region
semiconductor substrate
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP57123895A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5914676A (ja
Inventor
Masanori Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP57123895A priority Critical patent/JPS5914676A/ja
Publication of JPS5914676A publication Critical patent/JPS5914676A/ja
Publication of JPH0547982B2 publication Critical patent/JPH0547982B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/028—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs
    • H10D30/0291—Manufacture or treatment of FETs having insulated gates [IGFET] of double-diffused metal oxide semiconductor [DMOS] FETs of vertical DMOS [VDMOS] FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
JP57123895A 1982-07-16 1982-07-16 縦型電界効果トランジスタの製造方法 Granted JPS5914676A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57123895A JPS5914676A (ja) 1982-07-16 1982-07-16 縦型電界効果トランジスタの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57123895A JPS5914676A (ja) 1982-07-16 1982-07-16 縦型電界効果トランジスタの製造方法

Publications (2)

Publication Number Publication Date
JPS5914676A JPS5914676A (ja) 1984-01-25
JPH0547982B2 true JPH0547982B2 (en]) 1993-07-20

Family

ID=14871991

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57123895A Granted JPS5914676A (ja) 1982-07-16 1982-07-16 縦型電界効果トランジスタの製造方法

Country Status (1)

Country Link
JP (1) JPS5914676A (en])

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS648673A (en) * 1987-06-30 1989-01-12 Rohm Co Ltd Manufacture of semiconductor device
EP0890994A3 (en) * 1990-12-21 2000-02-02 SILICONIX Incorporated Power MOSFET and fabrication method

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5185381A (en]) * 1975-01-24 1976-07-26 Hitachi Ltd
FR2460542A1 (fr) * 1979-06-29 1981-01-23 Thomson Csf Transistor a effet de champ vertical de puissance pour hautes frequences et procede de realisation d'un tel transistor
JPS5726467A (en) * 1980-07-24 1982-02-12 Fujitsu Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
JPS5914676A (ja) 1984-01-25

Similar Documents

Publication Publication Date Title
JPS60134466A (ja) 半導体装置およびその製造方法
KR950021786A (ko) 모스펫(mosfet) 및 그 제조방법
JPH0712058B2 (ja) 半導体装置およびその製造方法
JPH0547982B2 (en])
JP3049496B2 (ja) Ｍｏｓｆｅｔの製造方法
JP3526090B2 (ja) 半導体装置の製造方法
JP2925910B2 (ja) 絶縁ゲート型半導体装置の製造方法
JPS6237543B2 (en])
JPS60136377A (ja) 絶縁ゲ−ト半導体装置の製造法
JPH01208865A (ja) 半導体装置の製造方法
JP3521921B2 (ja) 半導体装置の製造方法
JPH10209429A (ja) Ｔｆｔ型半導体装置及びその製造方法
JPS62281476A (ja) 半導体装置の製造方法
JPH04317376A (ja) 半導体装置
JPS6211516B2 (en])
KR0157872B1 (ko) 모스형 전계효과 트랜지스터 및 그 제조방법
JPS63129664A (ja) 半導体装置の製造方法
KR100202185B1 (ko) 반도체 소자 및 그 제조방법
JPS61187273A (ja) 半導体装置
JPH05259446A (ja) 半導体装置の製造方法
JPH0529624A (ja) 薄膜トランジスタ及びその製造方法
JPH0213827B2 (en])
JPH01161873A (ja) 半導体装置の製造方法
JPH0582066B2 (en])
JPS61214472A (ja) 半導体素子の製造方法